Preparation of SiC Wafers Using the TSSG Method
Application ID: 148101
The TSSG process, namely Top-Seeded Solution Growth, is a method used to grow SiC single crystals. It has the advantages of lower growth temperature and high crystal quality.
This model introduces the simulation method of the TSSG process, obtains the temperature distribution of the furnace body and the growth rate of the seed crystal surface, and provides a numerical analysis method for optimizing the growth uniformity.
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