 Schrödinger Equation |
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| Eigenvalue |
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| Stationary |
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| Time Dependent |
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| Semiconductor |
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| Semiconductor Equilibrium |
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| Semiconductor Initialization |
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| Small-Signal Analysis, Frequency Domain |
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| Stationary |
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| Time Dependent |
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| Aluminium Gallium Arsenide |
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| Diamond |
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| Gallium Antimonide |
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| Gallium Arsenide |
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| Gallium Nitride |
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| Gallium Phosphide |
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| Germanium |
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| Indium Antimonide |
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| Indium Arsenide |
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| Indium Phosphide |
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| Silicon |
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| Schrödinger-Poisson Equation |
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| Schrödinger-Poisson Coupling |
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| Electrostatics |
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| Schrödinger Equation |
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| Semiconductor Optoelectronics, Beam Envelopes1 |
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| Semiconductor-Electromagnetic Waves Coupling |
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| Electromagnetic Waves, Beam Envelopes |
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| Semiconductor |
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| Semiconductor Optoelectronics, Frequency Domain1 |
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| Semiconductor-Electromagnetic Waves Coupling |
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| Electromagnetic Waves, Frequency Domain |
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| Semiconductor |
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| Zero Flux |
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| Zero Probability |
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| Open Boundary |
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| Incoming type (advanced physics options) |
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| Outgoing type (default) |
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| Incoming wave |
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| Periodic Condition |
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| Continuity |
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| Floquet-Bloch periodicity |
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| Dissipation |
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| Effective Mass |
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| Electron Potential Energy |
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| Infinite Domain Modeling with Infinite Elements |
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| Infinite Domain Modeling with Perfectly Matched Layer |
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| Lorentz Force |
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| Rotating Frame |
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| Surface Charge Density |
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| Thin Insulator Gate |
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| Continuity/Heterojunction |
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| Continuous Quasi-Fermi Levels Model |
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| Thermionic Emission Model |
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| WKB Tunneling Model |
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| Electrostatics Boundary Conditions |
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| Distributed Capacitance |
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| Electric Displacement Field |
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| Electric Potential |
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| External Surface Charge Accumulation |
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| Floating Gate |
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| Floating Potential |
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| Ground |
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| Terminal |
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| Zero Charge |
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| Insulation |
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| Surface Traps: Continuous Energy Levels |
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| Surface Traps: Discrete Energy Levels |
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| Insulator Interface |
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| Surface Traps: Continuous Energy Levels |
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| Surface Traps: Discrete Energy Levels |
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| Tunneling: Fowler-Nordheim Model |
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| Tunneling: User defined |
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| Metal Contact |
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| Contact Resistance |
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| Ideal Ohmic |
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| Ideal Schottky |
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| WKB Tunneling Model |
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| Trap-Assisted Heterointerface Recombination |
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| Continuous Trap Levels |
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| Discrete Trap Levels |
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| Transition Between Discrete Levels |
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| Trap-Assisted Surface Recombination |
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| Continuous Trap Levels |
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| Discrete Trap Levels |
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| Shockley-Read-Hall Recombination |
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| Transition Between Discrete Levels |
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| Fermi-Dirac |
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| Maxwell-Boltzmann |
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| Density Gradient |
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| Finite Element (Log Equation Formulation) |
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| Finite Volume |
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| Quasi Fermi Level |
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| Electrostatics Domain Properties |
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| Charge Conservation |
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| Space Charge Density |
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| Semiconductor Material Model |
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| Incomplete Ionization |
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| Band gap narrowing |
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| Empirical models: Slotboom and Jain-Roulston |
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| Analytic Doping Model |
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| Box distribution (with preset profiles) |
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| User defined distribution |
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| Geometric Doping Model |
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| Boundary Selection for Doping Profile |
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| Preset profiles |
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| User defined profile |
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| Auger Recombination |
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| Direct Recombination |
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| Impact Ionization Generation |
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| User-Defined Generation |
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| User-Defined Recombination |
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| Trap-Assisted Recombination |
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| Continuous Trap Levels |
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| Discrete Trap Levels |
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| Shockley-Read-Hall Recombination |
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| Transition Between Discrete Levels |
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| Arora Mobility Model |
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| Caughey-Thomas Mobility Model |
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| Fletcher Mobility Model |
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| Klaassen Unified Mobility Model |
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| Lombardi Surface Mobility Model |
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| Power Law Mobility Model |
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| User Defined Mobility Model |
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| Indirect Optical Transitions |
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| Empirical silicon absorption |
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| User defined absorption |
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| Optical Transitions |
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| Spontaneous/Stimulated Emission |
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| Direct bandgap model |
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| User defined transition model |
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| Analytic Trap Density |
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| Box distribution (with preset profiles) |
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| User defined distribution |
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| Geometric Trap Density |
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| Boundary Selection for Trap Density |
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| Preset profiles |
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| User defined profile |
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Schrödinger Equation